Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide

Author:

Lin C.H.,Kuo J.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Timp G et al. Low-leakage, ultra-thin gate oxides for extremely high performance sub-100nm nMOSFETs. IEDM Digest; 1997.

2. Direct gate leakage current in transistors with ultrathin silicon nitride gate dielectric;Yeo;IEEE Electron Dev Lett,2000

3. Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxide;Lime;Microelectron Eng,2001

4. Impact of gate direct tunneling current on circuit performance;Choi;IEEE Trans Electron Dev,2000

5. Anil KG, Veloso A, Kubicek S, Schram T, Augendre E, de Marneffe JF, et al. Demonstration of fully Ni–silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications. In: VLSI symposium on technical digest; 2004.

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