Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory-Reference-Cited by-同舟云学术

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Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory

Published:2012-11 Issue: Volume:77 Page:31-34
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lai Chao-Sung,Wang Jer-Chyi,Chang Li-Chun,Liao Yi-Kai,Chou Pai-Chi,Chang Wei-Cheng,Ai Chi-Fong,Tsai Wen-Fa

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack;Wang;Int Electron Dev Meet,2006

2. Ge/Si heteronanocrystal floating gate memory;Li;Appl Phys Lett,2007

3. A novel high-k SONOS memory using TaN/Al2O3/Ta2O5/HfO2/Si structure for fast speed and long retention operation;Wang;IEEE Trans Electron Dev,2006

4. Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays;Rao;Solid-State Electron,2005

5. Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer;Kang;Solid-State Electron,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-03

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