Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

Author:

Baldauf Tim,Heinzig André,Trommer Jens,Mikolajick Thomas,Weber Walter Michael

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Device design guidelines for nano-scale MuGFETs;Lee;Solid-State Electron,2007

2. Reconfigurable nanowire electronics–a review;Weber;Solid-State Electron,2014

3. Configurable circuits featuring dual-threshold-voltage design with three-independent-gate silicon nanowire FETs;Zhang;IEEE Trans Circ Syst I,2014

4. Reconfigurable silicon nanowire transistors;Heinzig;Nano Lett,2012

5. Elementary aspects for circuit implementation of reconfigurable nanowire transistors;Trommer;IEEE Electron Device Lett,2014

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