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Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

  • Published:2017-02 Issue: Volume:128 Page:180-186
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

El Dirani Hassan,Fonteneau Pascal,Solaro Yohann,Legrand Charles-Alex,Marin-Cudraz David,Ferrari Philippe,Cristoloveanu Sorin

Funder

WayToGoFast

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. 28nm FDSOI technology platform for high-speed low-voltage digital applications;Planes,2012

2. Planar fully depleted SOI technology: a powerful architecture for the 20nm node and beyond;Faynot,2010

3. A 16nm FinFET CMOS technology for mobile SoC and computing applications;Wu,2013

4. Switching energy efficiency optimization for advanced CPU thanks to UTBB technology;Arnaud,2012

5. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms;Solaro;Solid State Electron,2016

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1. Study the Impact of ZrO2 High-k Dielectrics Gate Material on FD-SOI and PD-SOI MOSFET;Lecture Notes in Electrical Engineering;2022-09-04

2. Optimization of Feedback FET with Asymmetric Source Drain Doping Profile;Micromachines;2022-03-25

3. Understanding of Feedback Field-Effect Transistor and Its Applications;Applied Sciences;2020-04-28

4. Novel gate-grounded NMOS Triggered Device Structures for FD-SOI ESD Protection;2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC);2019-06

5. The concept of electrostatic doping and related devices;Solid-State Electronics;2019-05
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