The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology-Reference-Cited by-同舟云学术

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The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

Published:2017-06 Issue: Volume:132 Page:80-85
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tsai Ying-Chieh,Gong Jeng,Chan Wing-Chor,Wu Shyi-Yuan,Lien Chenhsin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs;Nakagawa,1999

2. Three-phase sinusoidal current PWM brushless motor driver ICs;Yamane,2004

3. Carrier-storage effect and extraction-enhanced lateral IGBT (E2LIGBT): a super-high speed and low on-state voltage LIGBT superior to LDMOS;Takahashi,2012

4. 600 V single chip inverter IC with new SOI technology;Hara,2014

5. Further study of the U-shaped channel SOI-LIGBT with enhanced current density for high-voltage monolithic ICs;Zhu;IEEE Trans Electron Dev,2016

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