Investigation of EMI-induced noise spectrum in an enhancement-type MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Effect of single-particle correlation on the spectrum of generation and recombination noise in semiconductors;Massimo;J Phys D: Appl Phys,2005
2. EMI noise control methods suitable for electric vehicle drive systems;Mutoh;IEEE Trans Electromagn Compat,2005
3. Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs;Srinivasan;Microelectron Eng,2005
4. Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs;Ahsan;Solid State Electron,2005
5. Optical noise reduction in a femtosecond Ti:sapphire laser pumped by a passively stabilized argon ion laser;Dufou;Optics Commun,2005
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reliable study of time- and frequency-domain EMI-induced noise in Wien bridge oscillator;Microelectronics Reliability;2012-11
2. NUMERICAL AND EXPERIMENTAL ANALYSIS OF EMI-INDUCED NOISE IN RC PHASE SHIFT OSCILLATOR;Progress In Electromagnetics Research;2012
3. INVESTIGATION INTO TIME- AND FREQUENCY-DOMAIN EMI-INDUCED NOISE IN BISTABLE MULTIVIBRATOR;Progress In Electromagnetics Research;2010
4. Investigations of Surface State and 1/frNoise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2009-07-21
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