Author:
Kim Keunwoo,Joshi Rajiv V.,Chuang Ching-Te
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Kim K, Chuang CT, Rim K, Joshi RV. Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS. IEEE Int SOI Conf, October 2002. p. 17–19
2. Mizuno T, Sugiyama N, Tezuka T, Numata T, Takagi S. High performance CMOS operation of strained-SOI MOSFETs using thin film SiGe-on-insulator substrate. Symp on VLSI Tech, June 2002. p. 106–107
3. Rim K, et al. Strained Si NMOSFETs for high performance CMOS technology. Symp on VLSI Tech, 2001. p. 59–60
4. Performance projection of scaled CMOS devices and circuits with strained Si-on-SiGe channels;Fossum;IEEE Trans. Electron Dev.,2003
5. Kim K, Joshi RV, Chuang CT. Strained-Si devices and circuits for low-power applications. Int Symp on Low Power Electronics and Design (ISLPED), August 2003. p. 180–3
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