Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors

Author:

Lu Ching-Sen,Lin Horng-Chih,Huang Tiao-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 50nm silicon-on-insulator N-MOSFET featuring multiple stressors: silicon–carbon source/drain regions and tensile stress silicon nitride liner;Ang;Symp VLSI Tech Dig,2006

2. Strained Si Channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy;Yaocheng;Symp VLSI Tech Dig,2007

3. MOSFET current drive optimization using silicon nitride capping layer for 65nm technology node;Pidin;Symp VLSI Tech Dig,2004

4. Mobility enhancement in local strain channel nMOSFETs by Stacked a-Si/poly–Si gate and capping nitride;Tsung Yi;IEEE Electron Device Lett,2005

5. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design;Ito;IEDM Tech Dig,2000

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