NEMS switch with 30nm-thick beam and 20nm-thick air-gap for high density non-volatile memory applications

Author:

Jang Weon Wi,Yoon Jun-Bo,Kim Min-Sang,Lee Ji-Myoung,Kim Sung-Min,Yoon Eun-Jung,Cho Keun Hwi,Lee Sung-Young,Choi In-Hyuk,Kim Dong-Won,Park Donggun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Limits on silicon nanoelectronics for terascale integration;Meindl;Science,2001

2. Device scaling limits of Si MOSFET’s and their application dependencies;Frank;Proc IEEE,2001

3. Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor;Abelé;IEDM Tech Dig,2005

4. A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics;Kam;IEDM Tech Dig,2005

5. A DRAM-like mechanical non-volatile memory;Jang;Proc Conf Solid-State Sens & Actuat,2007

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