Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level-Reference-Cited by-同舟云学术

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Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

Published:2016-07 Issue: Volume:121 Page:41-46
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mnatsakanov Tigran T.,Levinshtein Michael E.,Tandoev Alexey G.,Yurkov Sergey N.,Palmour John W.

Funder

Ioffe Institute and All-Russian Electrotechnical Institute

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Minority carrier injection and charge storage in epitaxial Schottky barrier diodes

2. Minority carrier injection of metal-silicon contacts

3. Minority carrier effects upon the small signal and steady-state properties of Schottky diodes

4. Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes

5. Schottky barrier diode characteristics under high level injection

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1. I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters;Semiconductors;2021-12

2. High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic;Semiconductors;2021-01

3. Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor;IEEE Transactions on Electron Devices;2020-09

4. S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities;Semiconductors;2020-05

5. Integrated 100 V bootstrap diode with enhanced reverse recovery characteristics for eGaN‐field effect transistor gate drivers;Electronics Letters;2020-03

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