Epitaxial graphene top-gate FETs on silicon substrates-Reference-Cited by-同舟云学术

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Epitaxial graphene top-gate FETs on silicon substrates

Published:2010-10 Issue:10 Volume:54 Page:1071-1075
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kang Hyun-Chul,Karasawa Hiromi,Miyamoto Yu,Handa Hiroyuki,Fukidome Hirokazu,Suemitsu Tetsuya,Suemitsu Maki,Otsuji Taiichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Limits on silicon nanoelectronics for terascale integration;Meindl;Science,2001

3. Ultrahigh electron mobility in suspended graphene;Bolotin;Solid State Commun,2008

4. Giant intrisic carrier mobilities in graphene and its bilayer;Morozov;Phys Rev Lett,2008

5. Operation of graphene transistors at gigahertz frequencies;Lin;Nano Lett,2009

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon;Journal of Applied Physics;2023-05-02

2. Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure;APL Photonics;2022-12-01

3. Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review;Applied Sciences;2020-06-24

4. p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies;ACS Applied Nano Materials;2019-12-11

5. Towards electronic devices based on epigraphene;Physics of Solid Surfaces;2018

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