Nanolayer boron-semiconductor interfaces and their device applications

Author:

Nanver Lis K.,Qi Lin,Liu Xingyu,Knežević Tihomir

Funder

Dutch Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility;Nanver;IEEE J Sel Top Quantum Electron,2014

2. High-efficiency silicon photodiode detector for sub-keV electron microscopy;Sakić;IEEE Trans Electron Devices,2012

3. PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility;Thammaiah;Solid State Electron,2021

4. T. Knežević, M. Krakers, L.K. Nanver, “Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range,” Proc. SPIE 11276, Optical Components and Materials XVII, pp. 1-13, 2020.

5. Nanometer-thin pure B layers grown by MBE as metal diffusion barrier on GaN diodes;Thammaiah,2019

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