On the extraction of the channel current in permeable gate oxide MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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2. 1.5 nm direct-tunneling gate oxide Si MOSFETs;Momose;IEEE Trans. Electron Dev.,1996
3. Lime F, Clerc R, Ghibaldo G, Pananakakis G, Guégan G. Impact of gate tunneling leakage on the operations of NMOS transistors with ultra-thin gate oxides. In: Proc INFOS, 2001. p. 119–25
4. On the universality of inversion layer mobility in Si MOSFETs: Part 1––effects of substrate impurity concentration;Takagi;IEEE Trans. Electron Dev.,1994
5. Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicron technology application;Esseni;IEEE Electron Dev. Lett.,2001
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