Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors

Author:

Sahoo Amit Kumar,Weiß Mario,Fregonese Sébastien,Malbert Nathalie,Zimmer Thomas

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits;Harame;IEEE Trans Electron Dev,1995

2. Si/SiGe epitaxial-base transistors. II. Process integration andanalog applications;Harame;IEEE Trans Electron Dev,1995

3. Walkey DJ, Smy TJ, Tran H, Marchesan D, Schroter M. Prediction of thermal resistance in trench isolated bipolar device structures. In: Bipolar/BiCMOS circuits and technology meeting 1998. Proceedings of the 1998; 1998. p. 207–10.

4. Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow;Walkey;Solid-State Electron,2002

5. A scalable thermal model for trench isolated bipolar devices;Walkey;Solid-State Electron,2000

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