Author:
Maconi A.,Arreghini A.,Monzio Compagnoni C.,Van den bosch G.,Spinelli A.S.,Van Houdt J.,Lacaita A.L.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS);De Salvo;IEEE Trans Dev Mater Reliab,2004
2. Highly manufacturable 32Gb Multi-Level NAND Flash memory with 0.0098μm2 cell size using TANOS (Si–Oxide–Al2O3–TaN) cell technology;Park;IEDM Tech Dig,2006
3. High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology;Cho;Electron Dev Lett,2000
4. Tanaka H, Kido M, Yahashi K, Oomura M, Katsumata R, Kito M, et al. Bit cost scalable technology with punch and plug process for ultra high density Flash memory. In: Symp VLSI Tech Dig; 2007. p. 14–5.
5. Jang J, Kim HS, Cho W, Cho H, Kim J, Shim S, et al. Vertical cell array using TCAT (terabit cell array transistor) technology for ultra high density NAND Flash memory. In: Symp VLSI Tech Dig; 2009. p. 192–3.
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