1. Höfler A, Strecker N. On the coupled diffusion of dopants and silicon point defects. Technical report, 94/11. Zurich, Switzerland: Integrated Systems Laboratory, ETH; 1994.
2. Höfler A. Development and application of a model hierarchy for silicon process simulation. Ph.D. thesis, Hartung-Gorre, Konstanz; 1997.
3. Modeling of phosphorus diffusion in silicon;Dunham,1993
4. Electron and hole mobilities in silicon as a function of concentration and temperature;Arora;IEEE Trans Electron Dev,1982
5. Carrier mobilities in silicon empirically relates to doping and field;Caughey;Proc IEEE,1967