Author:
Sampedro C.,Gámiz F.,Godoy A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. International Technology Roadmap for the Semiconductor Industry. .
2. Accurate statistical description of random dopant-induced threshold voltage variability;Millar;IEEE Electron Dev Lett,2008
3. Yokoyama M, Kim S, Zhang R, Taoka N, Urabe Y, Maeda T, et al. CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding. In: 2011 Symposium on VLSI technology (VLSIT); June 2011. p. 60–1.
4. Hybrid-orientation technology (HOT): opportunities and challenges;Yang;IEEE Trans Electron Dev,2006
5. A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects;Ruiz;IEEE Trans Electron Dev,2007
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