Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations

Author:

Navarro C.,Barraud S.,Martinie S.,Lacord J.,Jaud M.-A.,Vinet M.

Funder

French ANR

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Cramming more components onto integrated circuits;Moore;Proc IEEE,1998

2. Materials and structures for future nano CMOS;Iwai,2011

3. Performance of omega-shaped-gate silicon nanowire MOSFET with diameter down to 8nm;Barraud;IEEE Electron Device Lett,2012

4. Experimental investigation of the tunneling injection boosters for enhanced ion ETSOI tunnel FET;Villalon;IEEE Trans Electron Devices,2013

5. Stacked-nanowire and FinFET transistors: guidelines for the 7nm node;Gaben,2015

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