Funder
Agencia Estatal de Investigación
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide”;Denais;IEEE Trans On Device and Materials Reliability,2004
2. Review of reliability issues in high-k/metal gate stacks;Degraeve;Physical and Failure analysis of integrated circuits (IPFA),2008
3. D. Gao, C. Liu, Z. Gan, P. Ren, C. Zhan, W. Wong, Z. Chen, Y. Xia, “The study on the variation of NBTI degradation in high-scales FinFET technology,” IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018.
4. MOSFET Hot-Carrier Reliability improvement by Forward-Body Bias;Hokazono;IEEE Electron Dev Lett,2006
5. Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-k-Based Devices;Amat;IEEE Trans Device Mater Reliab,2011