Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations

Author:

Bischoff Carl,Leise Jakob,Quesada Emilio Perez-Bosch,Perez Eduardo,Wenger Christian,Kloes AlexanderORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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1. A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance;Semiconductor Science and Technology;2024-07-19

2. Analysis of Memristor Neural Networks for fault Tolerant Computing;2024 International Conference on Knowledge Engineering and Communication Systems (ICKECS);2024-04-18

3. A generic compact and stochastic model for non-filamentary analog resistive switching devices;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28

4. Stochastic switching of memristors and consideration in circuit simulation;Solid-State Electronics;2023-03

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