Robust memory cell cylinder capacitor with cross double patterning technology-Reference-Cited by-同舟云学术

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Robust memory cell cylinder capacitor with cross double patterning technology

Published:2010-12 Issue:12 Volume:54 Page:1675-1679
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Seong-Goo,Kim Cheon Bae

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Dusa M, et al. In: Symposium on semiconductor manufacturing; 2005. p. 177–80.

2. Maenhoudt M, et al. In: Proceedings of the SPIE, vol. 5764; 2005. p. 1508.

3. Hsu S, et al. In: Proceedings of the SPIE, vol. 5992; 2003. p. 59921Q.

4. Chang C, et al. In: Proceedings of the SPIE, vol. 5040; 2003. p. 1241.

5. Frommer A, et al. In: Proceedings of the SPIE, vol. 5752; 2005. p. 51.

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