Author:
Teixeira da Fonte Ewerton,Trevisoli Renan,Barraud Sylvain,Doria Rodrigo T.
Funder
National Council for Scientific and Technological Development
Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior
State of Sao Paulo Research Foundation
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Compact NBTI Reliability Modeling in Si Nanowire MOSFETs and Effect in Circuits;Prakash;IEEE Trans Device Mater Reliab,2017
2. Noise in Nanoscaled Semiconductor Devices, 724p;Grasser,2020
3. On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy;Boudier,2017
4. Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis;Zhao;2D Materials,2018
5. Charge pumping in MOS devices;Brugler;IEEE Trans Electron Devices,1969
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献