Terahertz imaging using strained-Si MODFETs as sensors-Reference-Cited by-同舟云学术

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Terahertz imaging using strained-Si MODFETs as sensors

Published:2013-05 Issue: Volume:83 Page:113-117
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Meziani Y.M.,Garcìa-Garcìa E.,Velázquez-Pérez J.E.,Coquillat D.,Dyakonova N.,Knap W.,Grigelionis I.,Fobelets K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Cutting-edge terahertz technology;Tonouchi;Nat Photon,2007

2. Terahertz technology;Siegel;IEEE Trans Microwave Theory Tech,2002

3. Detection mixing and frequency multiplication of terahertz radiation by two-dimensional electronic fluid, electron devices;Dyakonov;IEEE Trans Electron Dev,1996

4. Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor;Knap;Appl Phys Lett,2002

5. Nonresonant detection of terahertz radiation in field effect transistors;Knap;J Appl Phys,2002

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Potentialities of Small-Size Subterahertz-Wave Spectrometers Based on Cascade Frequency Multiplication for Local Environmental Monitoring of the Atmosphere;Radiophysics and Quantum Electronics;2023-03

2. Responsivity enhancement of a strained silicon field-effect transistor detector at 03 THz using the terajet effect;Optics Letters;2021-06-21

3. Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs;Sensors;2021-01-20

4. Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

5. Effect of contact-etch-stop-layer and Si 1-x Ge x channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays;Microelectronics Reliability;2018-04

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