Modeling of retention characteristics for metal and semiconductor nanocrystal memories-Reference-Cited by-同舟云学术

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Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Published:2007-05 Issue:5 Volume:51 Page:806-811
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Guan Weihua,Long Shibing,Liu Ming,Liu Qi,Hu Yuan,Li Zhigang,Jia Rui

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. A silicon nanocrystals based memory

2. Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance

3. Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides

4. Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

5. Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO2 tunnel barrier

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2. Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure;Japanese Journal of Applied Physics;2020-06-01

3. Resistive Switching Devices: Mechanism, Performance and Integration;Handbook of Memristor Networks;2019

4. Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films;Journal of Physics and Chemistry of Solids;2018-08

5. Finite-Element Modeling of Retention in Nanocrystal Flash Memories With High- $k$ Interpoly Dielectric Stack;IEEE Transactions on Electron Devices;2017-12

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