Effect of base–emitter breakdown on class-C power performance of common-base InGaP/GaAs HBTs

Author:

Halder Subrata,Hwang James C.M.,Lim Jiyoun,Cheon Sanghoon

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Order-of-magnitude improvement in microwave power capacity of InGaP/GaAs HBT under isothermal pulsed operation

2. Cheon Sanghoon, Kim Sung-Su, Kim Dae-Hyon, Park Jae-Woo. In: GaAs reliability workshop proceedings; 2002. p. 155-5.

3. Bao JW, Wei CJ, Hwang JCM, Wang RF, Wen CP. In: IEEE MTT-S international microwave symposium digest; 1997. p. 905-4.

4. Halder S, Hwang JCM, Geller BD, Solomon GA, Klein G. In: Proceedings of Asia Pacific microwave conference; 2005.

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