Author:
Ramirez-Garcia E.,Garduño-Nolasco E.,Rodríguez-Méndez L.M.,Diaz-Albarran L.M.,Valdez-Perez D.,Galaz-Larios M.C.,Aniel F.,Zerounian N.,Enciso-Aguilar M.A.
Funder
Instituto Politécnico Nacional
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Silicon-germanium heterojunction bipolar transistors;Cressler,2002
2. A new experimental technique for extracting base resistance and characterizing current-crowding phenomena in bipolar transistor;Verzellesi;Int Technical Digest Electron Devices Meeting,1992
3. Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe: C and InP/InGaAs HBTs;Ramirez-Garcia;Semiconductor Sci. Tech.,2012
4. 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications;Chevalier;J. Solid-State Circuits,2005
5. A new straighforward calibration and correction procedure for 'On Wafer' high frequency S-parameter measurements (45 MHz - 18 GHz);Van Wijnen;Proc. Int Electron Devices Meeting,1989