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Modeling of void formation in phase change memory devices

  • Published:2020-02 Issue: Volume:164 Page:107684
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Cywar Adam,Woods Zachary,Kim SangBum,BrightSky Matt,Sosa Norma,Zhu Yu,Kim Hyeong Soo,Kim Hyung Keun,Lam Chung,Gokirmak Ali,Silva Helena

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Simulation of Phase Change Memory Using Digital Logic Implementation Approach;Journal of Nanoelectronics and Optoelectronics;2024-05-01

2. New phase-change materials for photonic computing and beyond;Phase Change Materials-Based Photonic Computing;2024

3. New phase change materials for active photonics;Active Photonic Platforms 2022;2022-10-03

4. Active volume engineered waveguide embedded nonvolatile photonic memory cell;Journal of the Optical Society of America B;2022-04-22

5. Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes;Materials & Design;2021-04
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