Origin of the low-frequency noise in n-channel FinFETs-Reference-Cited by-同舟云学术

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Origin of the low-frequency noise in n-channel FinFETs

Published:2013-04 Issue: Volume:82 Page:21-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Theodorou C.G.,Fasarakis N.,Hoffman T.,Chiarella T.,Ghibaudo G.,Dimitriadis C.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Multiple-gate SOI MOSFETs: device design guidelines

2. Physical Insights Regarding Design and Performance of Independent-Gate FinFETs

3. Electrical characterization and design optimization of FinFETs with a TiN/HfO2gate stack

4. Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

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1. Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs;IEEE Journal of the Electron Devices Society;2024

2. AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors;IEEE Sensors Journal;2023-06-15

3. Optimization of two major interfaces in MoS2 FETs with low frequency noise analysis;Journal of the Korean Physical Society;2023-05-16

4. On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer;Applied Physics Letters;2022-01-03

5. Improving Low-Frequency Noise in 14-nm FinFET by Optimized High-k/Metal Gate Thermal Processing;IEEE Electron Device Letters;2021-08

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