Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
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2. Temperature dependence of emission efficiency and lasing threshold in laser diodes;Pankove;IEEE J Quant Electron,1968
3. Tunneling-injection quantum-dot laser: ultrahigh temperature stability;Asryan;IEEE J Quant Electron,2001
4. Temperature-insensitive semiconductor quantum dot laser;Asryan;Solid-State Electron,2003
5. Properties of a tunneling injection quantum-well laser: recipe for a “cold” device with a large modulation bandwidth;Sun;IEEE Photon Technol Lett,1993
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1. Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment;Applied Physics Letters;2022-09-05
2. Optimizing the Quantum Dot Lasers for High-Speed Operation: Novel Versus Conventional Designs;Conference on Lasers and Electro-Optics;2021
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4. Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics;Quantum Electronics;2019-06-01
5. Modulation Bandwidth of Double Tunneling-Injection Quantum Dot Lasers: Effect of Out-Tunneling Leakage;IEEE Journal of Quantum Electronics;2019-02
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