Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers-Reference-Cited by-同舟云学术

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Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers

Published:2020-01 Issue: Volume:163 Page:107660
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Park Honghwi,Lim Changhee,Lee Chang-Ju,Choi Muhan,Jung Sunghwan,Park Hongsik

Funder

National Research Foundation of Korea

Ministry of Science & ICT

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Bendability of single-crystal Si MOSFETs investigated on flexible substrate;Li;IEEE Electron Dev Lett,2006

2. M. Bruel, Process for the production of thin semiconductor material films, US Patent 5,374,564 (1994).

3. Epitaxial lift off process for gallium arsenide substrate reuse and flexible electronics;Cheng;Nat Commun,2013

4. High efficiency GaAs thin film solar cells by peeled film technology;Konagai;J Cryst Growth,1978

5. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies;Yoon;Nature,2010

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