1. Read disturb degradation mechanism due to electron trapping in tunnel oxide for low voltage flash memories;Kato;IEDM Tech Dig,1994
2. A new conduction mechanism for the anomalous bits in thin oxide flash EEPROMS;Modelli;Proc IRPS,2001
3. Statistical modelling of reliability and scaling projections for Flash memories;Ielmini;IEDM Tech Dig,2001
4. A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories;Pic;Microelectron Reliab,2007
5. Volatile and non-volatile memories in silicon with nano-crystal storage;Tiwari;IEDM Tech Dig,1995