New varactors and high-power high-frequency capacitive devices-Reference-Cited by-同舟云学术

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New varactors and high-power high-frequency capacitive devices

Published:2005-03 Issue:3 Volume:49 Page:385-397
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ioffe Valery M.,Chikichev Sergei I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Nonlinear semiconductor capacitance;Berman,1963

2. Introduction into varicap’s physics;Berman,1968

3. Physics of semiconductor devices;Sze,1981

4. Frequency modulation using p–n junction capacitances;Chudakov,1968

5. Semiconductor devices based on the modulation of electrode area;Ioffe;Electron–Sci Technol Business,1997

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N-well resistance modelling in Q-factor of doughnut-shaped PN varactors;Solid-State Electronics;2015-01

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