Characteristics of Ni/SiC Schottky diodes grown by ICP-CVD-Reference-Cited by-同舟云学术

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Characteristics of Ni/SiC Schottky diodes grown by ICP-CVD

Published:2006-09 Issue:9-10 Volume:50 Page:1510-1514
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gil Tae-Hyun,Kim Han-Soo,Lee Jong-Wook,Kim Yong-Sang

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Silicon carbide high-power devices;Weitzel;IEEE Trans Electron Dev,1996

2. Status of silicon carbide as a wide-bandgap semiconductor for high-temperature applications;Casady;Solid-State Electron,1996

3. Production of largest-area single crystal wafers of cubic SiC for semiconductor devices;Nishino;Appl Phys Lett,1983

4. The kinetics of very low temperature silicon epitaxial growth by confined plasma enhanced chemical vapor deposition;Shieh;The Electrochem Soc,1994

5. Gas-phase kinetics during microwave plasma-assisted diamond deposition: is the hydrocarbon product distribution dictated by neutral–neutral interactions;Hsu;J Appl Phys,1992

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inductively-coupled plasma-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbide thin films for MEMS;Sensors and Actuators A: Physical;2016-08

2. A simple synthesis of Ag2+x Se nanoparticles and their thin films for electronic device applications;Korean Journal of Chemical Engineering;2015-09-17

3. The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes;Applied Physics A;2008-02-16

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