A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology-Reference-Cited by-同舟云学术

A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

Published:2016-03 Issue: Volume:117 Page:170-184
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rossi Davide,Pullini Antonio,Loi Igor,Gautschi Michael,Gürkaynak Frank K.,Bartolini Andrea,Flatresse Philippe,Benini Luca

Funder

European FP7 ERC Advanced project MULTITHERMAN

YINS RTD project

Swiss NSF

Nano-Tera.ch

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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