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Compact modeling of STT-MTJ devices

  • Published:2014-12 Issue: Volume:102 Page:76-81
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Xu Zihan,Yang Chengen,Mao Manqing,Sutaria Ketul B.,Chakrabarti Chaitali,Cao Yu

Funder

National Science Foundation (NSF)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Spin torque random access memory down to 22nm technology;Wang;Trans Magn,2008

2. Spin-based neuron model with domain-wall magnets as synapse;Sharad;Trans Nanotechnol,2012

3. Wang P, Zhang W, Joshi R, Kanj R, Chen Y. A thermal and process variation aware MTJ switching model and its applications in soft error analysis. ICCAD 2012;720–727.

4. A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory;Chun;JSSC,2013

5. Current perspectives: spin transfer torques;Ralph;J MMM,2008

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1. A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT‐MTJ;IET Circuits, Devices & Systems;2024-01

2. A Compact Model of Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction;IEEE Transactions on Electron Devices;2024-01

3. Evaluation of Bi-CAM and TCAM cells with MTJ for low power and high-speed using 180 NM technology;RECENT ADVANCES IN SCIENCES, ENGINEERING, INFORMATION TECHNOLOGY & MANAGEMENT;2023

4. Embedded STT-MRAM Energy Analysis for Intermittent Applications using Mean Standby Duration;2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS);2021-11-28

5. From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review;IEEE Access;2020
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