New modeling method for the dielectric relaxation of a DRAM cell capacitor-Reference-Cited by-同舟云学术

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New modeling method for the dielectric relaxation of a DRAM cell capacitor

Published:2018-02 Issue: Volume:140 Page:29-33
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Choi Sujin,Sun Wookyung,Shin Hyungsoon

Funder

National Research Foundation of Korea

NRF

Ministry of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Sunami H. Dimension Increase in Metal-Oxide-Semiconductor Memories and Transistors, Advances in Solid State Circuit Technologies, Paul K Chu (Ed.), ISBN: 978-953-307-086-5, InTech. http://www.intechopen.com/books/advances-in-solid-state-circuit-technologies/dimension-increase-inmetal-oxide-semiconductor-memories-and-transistors/; 2010.

2. International Technology Roadmap for Semiconductors. www.itrs.net/.

3. Control of two types of dielectric relaxation current for Ta2O5 metal-insulator-metal capacitors;Kiyotoshi;Jpn J Appl Phys,2003

4. Dielectric phenomena in solids;Kao,2004

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric Relaxation Performance of DRAM Storage Capacitors and Ways of Improvement;2023 IEEE International Memory Workshop (IMW);2023-05

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