Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films-Reference-Cited by-同舟云学术

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Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films

Published:2021-12 Issue: Volume:186 Page:108084
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Konashuk A.S.,Filatova E.O.,Sokolov A.A.,Afanas'ev V.V.,Houssa M.,Stesmans A.

Funder

Helmholtz-Zentrum Berlin für Materialien und Energie

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Overview of selector devices for 3-D;Aluguri;J Electron Device Soc,2016

2. Access devices for 3D crosspoint memory;Burr;J Vac Sci. Technol B, Nanotechnol Microelectron Mater Process Meas Phenom,2014

3. Ovonic threshold-switching gexsey chalcogenide materials: stoichiometry, trap nature, and material relaxation from first principles;Clima;Phys Status Solidi - Rapid Res Lett,2020

4. Studies of short-range order in amorphous Ge x Se 100–x compounds by X-ray photoelectron spectroscopy;Theye;Philos Mag B,1994

5. Nanoscale phase separation effects near r = 2.4 and 2.67, and rigidity transitions in chalcogenide glasses;Boolchand;C. R. Chim,2002

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy;Journal of Materials Science: Materials in Electronics;2023-10

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