Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor-Reference-Cited by-同舟云学术

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Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor

Published:2006-07 Issue:7-8 Volume:50 Page:1330-1336
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen W.T.,Chen H.R.,Hsu M.K.,Chiu S.Y.,Chen G.H.,Chang Y.C.,Lour W.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Frequency response of HBT’s as photodetectors;Suematsu;IEEE Microwave Guided Wave Lett,1993

2. A fiber optic/millimeter-wave radio transmission link using HBT as direct photodetector and an optoelectronic upconverter;Suematsu;IEEE Trans Microwave Theory Tech,1996

3. Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs;Kamitsuna;IEEE Trans Microwave Theory Tech,2001

4. A 43-Gb/s clock and data recovery OEIC integrating an InP–InGaAs HPT oscillator with an HBT decision circuit;Kamitsuna;IEEE J Sel Top Quantum Electron,2004

5. High-gain InGaAsP–InP heterojunction phototransistors;Wright;Appl Phys Lett,1980

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