Investigation on the effect of tunnel oxide nitridation to threshold voltage instability mechanisms of nanoscale CT NVM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Kim K. Future silicon technology. In: 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012. p. 1–6.
2. Charge loss mechanisms of nitride based charge trap flash memory devices;Lee;IEEE Trans Electron Devices,2013
3. Threshold voltage instability mechanisms of nitride based charge trap flash memory – a review;Lee;J Nanosci Nanotechnol,2014
4. Technical solutions to mitigate reliability challenges due to technology scaling of charge storage NVM;Lee;J Nanomater,2013
5. Threshold voltage fluctuations in localized charge-trapping nonvolatile memory devices;Janai;IEEE Trans Electron Devices,2012
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation on the Charge Loss Mechanisms of Nanoscale Charge Trap Non-Volatile Memory by Using Stretched Exponential Function;Journal of Nanoscience and Nanotechnology;2016-01-01
2. Investigation on the origin of the anomalous tail bits on nitrided charge trap flash memory;Microelectronics Reliability;2015-02
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