Analysis and modeling of OFF-state hysteretic losses in GaN power HEMTs-Reference-Cited by-同舟云学术

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Analysis and modeling of OFF-state hysteretic losses in GaN power HEMTs

Published:2021-06 Issue: Volume:180 Page:107995
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mahajan Dhawal Dilip,Khandelwal Sourabh

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. COSS Losses in 600 V GaN power semiconductors in soft-switched, high- and very-high-frequency power converters;Zulauf;IEEE Transactions on Power Electronics,2018

2. IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);Zulauf,2017

3. COSS hysteresis in advanced superjunction MOSFETs;Fedison,2016

4. Coss related energy loss in power MOSFETs used in zero-voltage-switched applications;Fedison,2014

5. Empirical circuit model for output capacitance losses in silicon carbide power devices;Tong,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model;Solid-State Electronics;2022-03

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