Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency
2. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
3. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
4. Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
5. Double embedded photonic crystals for extraction of guided light in light-emitting diodes
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1. Plausibility of ultrathin CdTe solar cells: probing the beneficial role of MgZnO (MZO) high resistivity transparent (HRT) layer;Journal of Materials Science;2023-10
2. Low resistance Ga-doped ZnO ohmic contact to p-GaN by reducing the sputtering power;Materials Science in Semiconductor Processing;2018-07
3. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells;physica status solidi (a);2016-11-17
4. Improved Light Extraction of GaN-based LED with Patterned Ga-doped ZnO Transparent Conducting Layer;Molecular Crystals and Liquid Crystals;2016-02-11
5. Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode;Optics Express;2015-12-07
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