Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI;Hills;IEEE Trans Nanotechnol,2018
2. Advances in carbon nanotube technologies;Hills,2020
3. Extended scale length theory targeting low-dimensional FETs for carbon nanotube FET digital logic design-technology co-optimization;Gilardi,2021
4. Pitner G, Zhang Z, Lin Q, Su S-K, Gilardi C, Kuo C, et al. Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length. In: International electron devices meeting. 2020.
5. Top-gated carbon nanotube FETs from quantum simulations: comparison with experiments;Sanchez-Soares,2021