A rigorous Fermi-Dirac statistics-based MOSFET channel surface potential equation using polylogarithms

Author:

Ortiz-Conde AdelmoORCID,López-López Omar,Gutiérrez-Domínguez Edmundo,García-Sánchez Francisco J.ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. How to analyse a density of states. Materials Today;Toriyama;Electronics,2022

2. Kim R, Wang X, Lundstrom M, 2008. Notes on Fermi-Dirac Integrals. arXiv preprint arXiv: 0811.0116v5, 1 Nov 2008 (v1), last revised 8 Oct 2019 (this version). https://doi.org/10.48550/arXiv.0811.0116.

3. §25.12(iii) Fermi–Dirac and Bose–Einstein Integrals, NIST Handbook of Mathematical Functions, Version 1.1.6; Release date 2022-06-30, NIST 2010-2022. https://dlmf.nist.gov/25.12#iii.p2.

4. Liou JJ, Ortiz-Conde A, García-Sánchez FJ. “Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction.” Springer New York, NY: 1998. http://doi.org/10.1007/978-1-4615-5415-8.

5. Relative errors of free-carrier density at different temperatures calculated from approximations for the Fermi-Dirac integral;Yue;Jap J Appl Phys,1995

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Recent Applications of Polylogarithms in MOSFET Modeling;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

2. A Physics-Based Compact Model for Silicon Cold-Source Transistors;IEEE Transactions on Electron Devices;2023-04

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