Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs-Reference-Cited by-同舟云学术

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Published:2008-12 Issue:12 Volume:52 Page:1904-1909
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pavanello Marcelo Antonio,Martino Joao Antonio,Simoen Eddy,Rooyackers Rita,Collaert Nadine,Claeys Cor

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Multiple-gate SOI MOSFETs: device design guidelines;Park;IEEE Trans Electron Devices,2002

2. Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode;Rudenko;Microelectron Eng,2005

3. FinFET analogue characterization from DC to 110GHz;Lederer;Solid-State Electron,2005

4. Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization;Raskin;IEEE Trans Electron Devices,2006

5. Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs;Subramanian;IEDM Digest Tech Pap,2005

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4. Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates;Solid-State Electronics;2013-12

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