Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method-Reference-Cited by-同舟云学术

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Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method

Published:2015-02 Issue: Volume:104 Page:86-89
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nguyen Manh-Cuong,Jeon Yoon-Seok,Tong Duc-Tai,You Seung-Won,Jeong Jae-Kyeong,Kim Bio,Ahn Jae-young,Hwang Kihyun,Choi Rino

Funder

Basic Science Research Program

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Inha University Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect characterization in floating body transistors using a single pulse charge pumping method;Journal of Vacuum Science & Technology B;2021-09

2. Features of the Morphology and Structure of Thin Silicon Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-01

3. A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance;Applied Physics Letters;2019-05-06

4. Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-09

5. Enhancement of the High Temperature Thermal Stability of Ni Based Silicide by Multiple Metal Layer Stacking;Nanoscience and Nanotechnology Letters;2017-04-01

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