Modelling of strained-Si/SiGe NMOS transistors including DC self-heating

Author:

Jankovic Nebojsa D.,Pesic Tatjana V.,O’Neill Anthony

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. International technology roadmap semiconductors (ITRS), San Jose, CA, Semiconductor Industry Associates; 2003.

2. Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels;Possum;IEEE Trans Electron Dev,2003

3. Rim K, Hoyt J, Gibbons J. Strained Si NMOSFETs for high performance CMOS technology. In: Proceedings of symposium on VLSI technology; 2001. p. 59–60.

4. Device and circuit performance of SiGe/Si MOSFETs;Badcock;Solid-State Electron,2002

5. A compact non-quasi-static MOSFET model based on the equivalent nonlinear transmission line;Pesic;IEEE Trans Comput Aid Des Integr Circ Syst,2005

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1. Modelling of Deformations and Band Diagram of Semiconductor Hetorostructure Silicon-germanium;2023 5th International Conference on Control Systems, Mathematical Modeling, Automation and Energy Efficiency (SUMMA);2023-11-08

2. Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique;2014 27th International Conference on VLSI Design and 2014 13th International Conference on Embedded Systems;2014-01

3. Modeling and Simulation of Hetero-FETs;Series in Material Science and Engineering;2007-01-11

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