Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range-Reference-Cited by-同舟云学术

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Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range

Published:2008-06 Issue:6 Volume:52 Page:937-940
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dongyue Jin,Wanrong Zhang,Pei Shen,Hongyun Xie,Yang Wang,Wei Zhang,Lijian He,Yongping Sha,Jia Li,Junning Gan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. SiGe heterojunction bipolar transistors;Peter,2003

2. SchuBler Martin, Krozer Viktor, de la Fuente Jesus Grajal, Hartnagel Hans L. Thermal coupling in multi-finger heterojunction bipolar devices. In: Proceedings of the 27th european microwave conference. 1997; p. 104–8.

3. A new expression of the thermal stability for RF power HBTs;Jin;Chin J Electron Dev,2006

4. Thermal stability of emitter ballasted HBT’s;Michael;IEEE Trans Electron Dev,1998

5. Self-heating effect compensation in HBTs and its analysis and simulation;Zhu;IEEE Trans Electron Dev,2001

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1. RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor;J INFRARED MILLIM W;2021

2. Innovative SiGe HBT Topologies With Improved Electrothermal Behavior;IEEE Transactions on Electron Devices;2016-07

3. Review of Telecommunication Aspects for Power Amplifier Design;Signals and Communication Technology;2015-12-30

4. Introduction;Signals and Communication Technology;2015-12-30

5. Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability;Advanced Materials Research;2013-09

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