A novel substrate Voltage-assisted RESURF technique in SOI LDMOS with a heavily doped drift region
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Unified theory of the capacitance behavior in LDMOS devices;Kaushal;IEEE Trans Electron Devices,2018
2. A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage;Xiang;Solid-State Electron,2022
3. Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs;Yu;IEEE T Device Mat Re,2021
4. Study of the SOI LDMOS with low conduction loss and less gate charge;Guo;IEEE Trans Electron Devices,2018
5. A. W. Ludikhuize, “A review of RESURF technology,” in Proc. ISPSD, 2000, pp. 11-18.
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