Author:
Schmidt Andrei,Dreiner Stefan,Vogt Holger,Goehlich Andreas,Paschen Uwe
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Novo C, Giacomini R, Doria R, Afzalian A, Flandre D. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. Semicond. Sci. Technol., vol. 29, no. 7, p. 075008.1−9, July 2014. http://dx.doi.org/10.1088/0268-1242/29/7/075008.
2. Sze SM, Ng KK. Photodetectors and solar cells. In: Physics of semiconductor devices, 3rd ed. NJ, Haboken, John Wiley & Sons Inc; 2007. p. 663–742. http://dx.doi.org/10.1002/0470068329.
3. Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths;de Souza;J Integr Circ Syst,2011
4. Schmidt A, Dreiner S, Vogt H, Paschen U. Thin-film SOI PIN-diode leakage current dependence on back-gate potential and HCI traps. In: Proc. ESSDERC; 2015. p. 290–293. http://dx.doi.org/10.1109/ESSDERC.2015.7324771.
5. Study of total quantum efficiency of lateral SOI PIN photodiodes with back-gate bias, intrinsic length and temperature variation;Novo;ECS Trans,2015
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