Author:
Puglisi Francesco M.,Pavan Paolo,Padovani Andrea,Larcher Luca,Bersuker Gennadi
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. A high performance phase-change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material;Cheng;IEEE IEDM Tech Dig,2011
2. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;Govoreanu;IEEE IEDM Tech Dig,2011
3. Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices;Vandelli;IEEE IEDM Tech Dig,2011
4. Bersuker G, Gilmer DC, Veksler D, Yum J, Park H, Lian S, et al., Metal Oxide RRAM switching mechanism based on conductive filament microscopic properties. In: Proc of IEEE IEDM; 2010. p. 456-459.
5. Tseng YH, Shen WC, Huang C-E, Lin CJ, King Y-C. Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis. In: Proc of IEEE IEDM; 2010. p. 636–639.
Cited by
31 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献